CERN-GENEVA BARREL MODULES


Index:

{Module 1}
{Module 2}
{Module M1}
{Module M2}
{Module M4}




MODULE 1: abcd#1 chips non metallised


picture [jpg]

Total leakage current before after gluing detector 1, detector 2

S-Curves at 2 fC

S-Curves at 4 fC

Gain (linear fit 3fC-4fC) [ps]

Offset (linear fit 3fC-4fC) [ps]

comparison hybrid-module [ps]

noise scan [ps]

thermal image of the module




MODULE 2: abcd#1 chips (backplane scratched and connected to agnd)


picture [jpg]

Total leakage current before after gluing detector 1, detector 2




MODULE M1: abcd#2 chips metallised (thickness 500 um)


Total leakage current before and after gluing detector1 (CSEM2881), detector2 (CSEM2891)

Results for I(preamplifier)=165.6 uA and I(shaper)=22.8 uA:

All channels connected to the silicon detector: gain,offset,ENC [ps]

All channels connected to the silicon detector: Threshold scan at 3fC [ps]

40 channels disconnected from the silicon detector: gain,offset,ENC [ps]

40 channels disconnected from the silicon detector: Threshold scan at 2.9fC [ps]

Results for I(preamplifier)=220.8 uA and I(shaper)=8.4 uA:

40 channels disconnected from the silicon detector: gain [ps]

40 channels disconnected from the silicon detector: offset [ps]

40 channels disconnected from the silicon detector: ENC [ps]

Results for 3fC injected charge (noise and 50% values)

Comparison for I(preamplifier)=220.8 uA, I(shaper)=8.4 uA and I(shaper)=12.0 uA:

Results for 3fC injected charge (noise and 50% values)

Results for I(preamplifier)=220.8 uA and I(shaper)=22.8 uA:

Results for 3fC injected charge (noise and 50% values)




MODULE M2: abcd#2 chips metallised (thickness 300 um)


Total leakage current before and after gluing detector1 (CSEM2880), detector2 (CSEM2897)

Results from the configuration: The bias scheme is the default one on the Oslo hybrid but 1k Ohm resistor has been added between the detector backplane and the decoupling capacitor on the Oslo hybrid. The first chip (channels 1-128) has been connected first to 6 cm detector and after to 12 cm detector. However 20 channels have been left floating for reference. Here it is a comparison for chip 1 among the configurations no connection, 6 cm and 12 cm connection in the high current region. [ps]

Comparison among s_curves for the 12cm,6cm,0cm configuration for 4 different channels (the bias hybrid configuration for the 12cm and 6cm has the 1k Ohm resistor): [ps]

Results from the configuration: chip1 (channels 1-128) connected to 12cm detector, chip2 (channels 129-256) to 6cm detector and chip3-6 (channels 257-768) not connected. The bias scheme is Oslo default + 1k Ohm resistor. Since with this configuration we have bad results in the high current region, here are the results in the low current region. [ps]

Comments: the addition of the 1k Ohm resistor helped a lot in the situation where just the chip 1 was connected to the detector. However we observe a deterioration of the chip performance when we go from the 6 cm to the 12 cm configuration (see s_curves). This resistor is not enough with the configuration: chip1 connected to 12 cm detector and chip 2 to 6 cm detector. In this case we are obliged to work in the low current region.

Results in the low current region for injected charge of 2 fC and 2 triggers (the second trigger arrives while the chips are still sending the data belonging to the first trigger) [ps]




MODULE M4: abcd#2 chips metallised (thickness 300 um)


Status on the 17th of March 1999

Status on the 18th of March 1999

Summary for hybrids comparison [ps]

Comparison between module m2 and module m4


Last updated: 15-sep-1998 by DM