ABCD2T module with irradiated chips
Here you can find the results from a test on ABCD2T irradiated chips connected
to 12 cm unirradiated silicon detector (ABCD2NT chips are not considered in this analysis)
Module description:
- Hybrid: Oslo barrel type with alumina substrate
- Chips: 3 ABCD2T chips and 3 ABCD2NT chips
- Detectors: 2 CSEM barrel detectors with a total leakage current of 50 uA
at 80 V
- Comment: the hybrid has been irradiated with 24 GeV protons from PS
at Cern with a total fluece of 3x10**14 p/cm**2. The analysis of the
3 ABCD2T irradiated chips can be found in the ATL-INDET-99-019.
Set up:
- PC connected to a VME-MXI-2 vme module
- SEQSI
- DRAFT
- Pcb from Jan Kaplon's design
- Software from Carlos Lacasta
Results:
The module is stable over a wide range of preamplifier biases.
For preamplifier biases > 230 uA the chip's performances start
to deteriorate: the module is still stable but the gain and offset distributions
get wider and do not really fit to a guassian curve.
The detailed analysis is reported for the preamp bias=202.4 uA and
shaper bias = 31.2 uA .The gain and the offset are calculated fitting 6 points from 1.5 fC to 3.5 fC
with linear curve. The 3 chips have been trimmed at 2 fC. The default run mode is edge sensing circuitry ON and
01X data compression.
The offset values obtained with the previous method can be compared with the
ones obtained from the following scans:
- Threshold scan with 0fC injected charge: chip0 ,
chip1 , chip2 .
- Noise scan: chip0 ,
chip1 , chip2 .
- Comment: the tails of the distributions are due to hot and untrimmable channels. In fact if , for example, we take away from the distribution of chip0
for 0fC injected charge one hot channel and 2 untrimmable ones, we obtain the following distribution chip0 . There is no difference in the offset values obtained
from two noise distributions. This would lead to the conclusion that the DAC doesn't
inject a small amount of charge (indipendently of the loaded charge) that would affect the offset values obtained from the linear fit. However the difference
of the offset values obtained from the noise/0fC distributions and the linear
fit is of about 20 mV. If we trust the offset value obtained with the
noise/0fC scan, we get at 1 fC (about 100 mV) a noise occupancy < 10**-4.
Strobe delay scans have been made for charges between 1 fC and 5 fC (the
strobe delay value doesn't change for charges > 5 fC). The threshold
value is 80 mV, that corrisponds to 1 fC as caluculated from the
linear fit:
- Plots of the strobe delay in ns as a function of the injected charge:
chip0 ,
chip1 , chip2
- Distribution of the time walk defined as the difference between the value at 1.25 fC and the value at 5 fC:
chip0 ,
chip1 , chip2
- Warning: in order to calculate the time walk as from specification
we had to go down to 1.25 fC for the injected charge value.
The curves at these low values of the injected charge do not follow the expeted shape for the reasons already mentioned (see s_curves at 1.5 fC).
Here it is the result of the time scan at 1.25 fC summed over
the 384 channels ps . The shape of the sum rappresents quite well the shape of the
single channels. We plan to estimate the time walk running in level sense mode.
Authors: Brendan Dick and Daniela Macina